Analysis of submicron carbon nanotube field-effect transistors

A theoretical analysis of carbon nanotube based field-effect transistors fabricated by two different groups @Tans et al., Nature ~London! 393, 49 ~1998!; Martel et al., Appl. Phys. Lett. 73, 2447 ~1998!# is presented. The metal ~electrode!-semiconductor ~nanotube! contact influences subthreshold channel conductance versus gate voltage VG , such that the occurrence of a kink depends on the transport mechanism across this contact. Saturation in the turn-on drain current ID vs VG seen in experiments reflects the nanotube state density. Saturationless ID versus drain voltage VD indicates transport in the weak-localization regime in the absence of carrier–carrier scattering so that pinch-off cannot occur. To compensate for saturationless ID(VD) in digital applications, nanotube transistors need to be designed to maximize their transconductance. © 2000 American Institute of Physics. @S0003-6951~00!01505-9#